Workshop on Nanoscale Devices

Ole Bethge, Vienna University of Technology, Vienna, Austria
ALD-grown Rare Earth Oxides: Effective Passivation of the Germanium Channel in MOS devices
Ian B. Burgess, Harvard University, USA
Tunable wetting and color in porous 3D photonic crystals
Meng-Hsueh Chiang, National Ilan University,Taiwan
High Density and Low Power Design of Nanowire CMOS
Cory D. Cress, U.S. Naval Research Laboratory, USA
Radiation Response of Carbon Nanoelectronics
Ovidiu Crisan, National Institute for Materials Physics, Romania
Hybrid architectures made of core-shell nanoparticles with magnetoresistive response
Shi-Jin Ding, Fudan University, China
Amorphous In-Ga-Zn-O Channel-Based Thin-Film-Transistor Memory Devices
Malek Gassoumi, Université des Sciences et Technologies de Lille 1, France
Performance of Strained AlGaN/AlN/GaN heterojunction field effect Transistors (HEMTs) with Si3N4 Passivation
Gilles Jacquemod, Polytech’Nice Sophia – UNS, France
CMOS Technology Beyond 20 nm
Jae Kyeong Jeong, Inha University, South Korea
Reliability of ZnO-based oxide field-effect transistors for advanced flat-panel displays
Chang Su Kim, Korea Institute of Materials Science (KIMS), Korea
Highly transparent and flexible Ag nanowire-polymer composite electrode
Guilhem Larrieu, LAAS-CNRS, France
Nanowire transistors: a credible option for sub-7nm devices?
Takuya Matsumoto, Osaka University, Japan
Stochastic resonance in a molecular redox circuit
Yasuhide Ohno, Osaka University, Japan
Graphene field-effect transistor for biological sensing applications
Tomoya Ono, Osaka University,Japan
First-Principles Study on Oxidaton Process of 4H-SiC
Sachiko Ono & Hidetaka Asoh, Kogakuin University, Japan
Nano/micropatterning of semiconductor substrates by anisotropic chemical etching and anodic etching combined with sphere photolithography
Boon S. Ooi, King Abdullah University of Science & Technology, KSA
Molecular epitaxy growth of InGaN/GaN nanowires for LED applications
Fernando Palacio, CSIC (High Scientific Research Council) and University of Zaragoza, Spain
Evan Reed, Stanford University, USA
Emergent electromechanical properties of monolayer and few-layer materials for NEMS
Frank Schwierz, Technische Universität Ilmenau, Germany
Two-Dimensional Semiconductors for Nanoelectronics – Is This the Future or Wishful Thinking?
Yanlin Song, Institute of Chemistry, CAS, China
Applications of Nanoparticles in Printed Electronics and Photonics
Yoon-Ho Song, Electronics & Telecommunications Research Institute/University of Science & Technology, South Korea
Highly Stable and Reliable Carbon Nanotube Field Emitters for Digital X-ray Sources
Vanna Torrisi, University of Catania and CSGI, Italy
Electrical properties of organic-inorganic hybrid layered systems
Yutaka Wakayama, National Institute for Materials Science, Japan
Integration of molecular functions into Si-based tunneling device
Heinz D. Wanzenboeck, Vienna University of Technology, Austria
Direct-write deposition with a focused electron beam – Principle and Applications for Nanomagnetologic
Liangchi Zhang, The University of New South Wales, Australia
Some issues in the nano-manufacture of miniaturised surfaces