Workshop on Nanoscale Devices

  • Ole Bethge, Vienna University of Technology, Vienna, Austria
    ALD-grown Rare Earth Oxides: Effective Passivation of the Germanium Channel in MOS devices
  • Ian B. Burgess, Harvard University, USA
    Tunable wetting and color in porous 3D photonic crystals
  • Meng-Hsueh Chiang, National Ilan University,Taiwan
    High Density and Low Power Design of Nanowire CMOS
  • Cory D. Cress, U.S. Naval Research Laboratory, USA
    Radiation Response of  Carbon Nanoelectronics
  • Ovidiu Crisan, National Institute for Materials Physics, Romania
    Hybrid architectures made of core-shell nanoparticles with magnetoresistive response
  • Shi-Jin Ding, Fudan University, China
    Amorphous In-Ga-Zn-O Channel-Based Thin-Film-Transistor Memory Devices
  • Malek Gassoumi, Université des Sciences et Technologies de Lille 1, France
    Performance of Strained AlGaN/AlN/GaN heterojunction field effect Transistors (HEMTs) with Si3N4 Passivation
  • Gilles Jacquemod, Polytech’Nice Sophia – UNS, France
    CMOS Technology Beyond 20 nm
  • Jae Kyeong Jeong,  Inha University, South Korea
    Reliability of ZnO-based oxide field-effect transistors for advanced flat-panel displays
  • Chang Su Kim, Korea Institute of Materials Science (KIMS), Korea
    Highly transparent and flexible Ag nanowire-polymer composite electrode
  • Guilhem Larrieu, LAAS-CNRS, France
    Nanowire transistors: a credible option for sub-7nm devices?
  • Takuya Matsumoto, Osaka University, Japan
    Stochastic resonance in a molecular redox circuit
  • Yasuhide Ohno, Osaka University, Japan
    Graphene field-effect transistor for biological sensing applications
  • Tomoya Ono, Osaka University,Japan
    First-Principles Study on Oxidaton Process of 4H-SiC
  • Sachiko Ono & Hidetaka Asoh, Kogakuin University, Japan
    Nano/micropatterning of semiconductor substrates by anisotropic chemical etching and anodic etching combined with sphere photolithography
  • Boon S. Ooi, King Abdullah University of Science & Technology, KSA
    Molecular epitaxy growth of InGaN/GaN nanowires for LED applications
  • Fernando Palacio, CSIC (High Scientific Research Council) and University of Zaragoza, Spain
  • Evan Reed, Stanford University, USA
    Emergent electromechanical properties of monolayer and few-layer materials for NEMS
  • Frank Schwierz, Technische Universität Ilmenau, Germany
    Two-Dimensional Semiconductors for Nanoelectronics – Is This the Future or Wishful Thinking?
  • Yanlin Song, Institute of Chemistry, CAS, China
    Applications of Nanoparticles in Printed Electronics and Photonics
  • Yoon-Ho Song, Electronics & Telecommunications Research Institute/University of Science & Technology, South Korea
    Highly Stable and Reliable Carbon Nanotube Field Emitters for Digital X-ray Sources
  • Vanna Torrisi, University of Catania and CSGI, Italy
    Electrical properties of organic-inorganic hybrid layered systems
  • Yutaka Wakayama, National Institute for Materials Science, Japan
    Integration of molecular functions into Si-based tunneling device
  • Heinz D. Wanzenboeck, Vienna University of Technology, Austria
    Direct-write deposition with a focused electron beam – Principle and Applications for Nanomagnetologic
  • Liangchi Zhang, The University of New South Wales,  Australia
    Some issues in the nano-manufacture of miniaturised surfaces
Operating Organization

University of Electronic Science and Technology of China